Instruction/ maintenance manual of the product FDD6690A Fairchild
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July 2003 2003 Fairchild Semiconductor Corp. FDD6690A Rev EW) FDD6690A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s .
FDD6690A Rev. EW) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) E AS Drain-Source Avalanche E.
FDD6690A Rev. EW) D R P DS(ON) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain–Source Diode Forward Current 2.
FDD6690A Rev. EW) Typical Characteristics 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) 3.0V 4.0V V GS = 10.0V 3.5V 4.5V 6.0V 5.0V 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 I D , DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 3.
FDD6690A Rev. EW) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 Q g , GATE CHARGE (nC) V GS , GATE-SOURCE VOLTAGE (V) I D = 12 A V DS = 10V 15V 20V 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 V DS , DRAIN TO SOURCE VOLTAGE (V) CAPACITANCE (pF) C iss C rss C oss f = 1MHz V GS = 0 V Figure 7.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESER VES THE RIGHT T O MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN.
An important point after buying a device Fairchild FDD6690A (or even before the purchase) is to read its user manual. We should do this for several simple reasons:
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If you already are a holder of Fairchild FDD6690A, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Fairchild FDD6690A.
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