Instruction/ maintenance manual of the product A005 HP (Hewlett-Packard)
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T ransistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips in each pack.
2 3.0 Die Attach Procedure Different die attach procedures are used for silicon chips and GaAs devices. To die attach a silicon chip, the chip and mounting surface are heated sufficiently for the gold of the mounting surface to mix with the gold backside of the chip and melt into the silicon of the chip, forming a gold-silicon eutectic bond.
3 3.2.4 Pick up a chip with tweezers ( EREM type 5 SA recommended) and orient it properly prior to placement on the heated surface. 3.2.5 Place the chip on the heated surface and scrub with a back-and- forth motion being careful not to scratch the top surface of the chip.
4 4.2 Thermocompression Wedge Bonding In circuits where there is good access to the transistor chip bonding pads and to the circuit elements to which the chip bonds run, a variety of wedge bonders, including many new semi-automatic units, can be used.
5 6.0 Electrostatic Discharge Precautions The following discussion applies mainly to GaAs FET devices, but excess voltages can damage a silicon bipolar device as well. Slight degradation of a GaAs FET device can occur with electrostatic potentials as low as 500 volts and capacitances on the order of that of the human body.
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