Instruction/ maintenance manual of the product AN-7502 Fairchild
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©2002 Fairch ild Semicond uctor Corpo ration Application No te 7502 Rev. A1 AN-7502 Power MOSFET Swit ching Wavefo rms: A New Insight The examination of power MOSFET voltage an d current wa vef or ms du ring switching t ransition s rev eal s that t he device characte rizati on now practiced by ind ustry is i nade- quate .
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 FIGURE 4. IDEALIZED POWER MOSFET WAVEFORMS FIGURE 5. STEP-VOLTAGE FORCING FUNCTION P ower MOSFET devices are hi ghly ca paci ti ve in nature; hence , simp le ca pacitor re sponses to the f orcing funct ions off er a g ood v ehicle for comparison.
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Stat e 2: MOS A ctIv e, JFET ActIv e This st ate gr aphic ally illust rates the dram atic inf luence that the JFET has on the po wer MOSF ET drain -vol tage wa ve- f orm.
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 FIGURE 9. NORMALIZED RFM15N15 SWITCHING WAVE- FORMS FOR CANSTANT GATE-CURRENT DRIVE. Step-V oltag e Ga te Drive The majori ty of power MO SFET applica tions emplo y a step gate- voltag e input wit h a finite source re sistance R O .
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Experimental V erification Since the s witching equa tions for step current s and voltages diff er only by gat e-current m.
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 F or pea k gate volta ges othe r than 10 v olts , and l oad resi s- tances other tha n BV DSS /I D(MAX) , the equati ons o.
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Tu r n - O n State 1: M OS Off, JFE T Off I PK1 = V G /R O State 2: MO S Active, JFET Ac tive I PK2 = (V G - V GS(TH) )/R .
©2002 Fairch ild Semicond uctor C orpo ration Application N ote 7502 Rev. A1 Case 3 :Common-So urce Gate Drive, Figure B-3 FIGURE B-3. COMMON-SOURCE GATE-DRIVE CIRCUIT Tu r n - O n R O = R D (drain -to-gro und capacitan ce of driving de vice adds to C GS of driven MOSFET .
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN.
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