Instruction/ maintenance manual of the product MoBL CY62157E Cypress Semiconductor
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8-Mbit (512K x 16) S t atic RAM CY62157E MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-9 43-2600 Document #: 38-05695 Rev . *C Revised November 21, 2006 Features • V ery high speed: 45 ns • Wide volt age range: 4.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 2 of 12 Pin Configuration [2, 3] Product Port folio Product Range V CC Range (V) Speed (ns) Power Dissipation Operating I CC , (mA) Standb y , I SB2 ( µ A) f = 1MHz f = f max Min T yp [4] Max T yp [4] Max T yp [4] Max T yp [4] Max CY62157E-45 Ind’l 4.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 3 of 12 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. .............. ..... –65°C to + 150°C Ambient T e mperature with Power Applied .
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 4 of 12 Thermal Resist ance [9] Parameter Descriptio n T est Co nd itions TSOP II VFBGA Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , solder ed on a 3 × 4.5 inch , two-layer printed circuit board 77 72 °C/W Θ JC Thermal Resistance (Junction to Case) 13 8.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 5 of 12 Switching Characteristics Over the Operating Range [12] Parameter Description 45 ns 55 ns Unit Min Max Min Max Read Cycle t RC Read Cycle T .
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 6 of 12 Switching W aveforms Read Cycle 1 (Add ress T ransition Controlled) [16, 17] Read Cycle 2 (OE Controlled ) [1 7, 18] Notes: 16. The device is contin uously selected. OE , C E 1 = V IL , B HE and/or BLE = V IL , and CE 2 = V IH .
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 7 of 12 Write Cycle 1 (WE Controlled) [15, 19, 20, 21] Write Cycle 2 (CE 1 or CE 2 Controlled) [15, 19, 20, 21] Notes: 19. Data IO is high impedance if OE = V IH . 20. If CE 1 goes HIGH and CE 2 goes LOW simultaneously wit h WE = V IH , the output remains in a hi gh-impedance state.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 8 of 12 Write Cycle 3 (WE Controlled, OE LOW) [20, 21] Write Cycle 4 (BHE /BLE Controlled, OE LOW) [20, 21] Switching W aveforms (continued) V ALID .
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 9 of 12 T ruth T able CE 1 CE 2 WE OE BHE BLE Inputs/Outputs Mode Power H X X X X X High Z Deselect/Power-Down S tandby (I SB ) X L X X X X High Z D.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 10 of 12 Package Diagrams 44-pin TSOP II (51-85087) 51-85087-*A [+] Feedback.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 1 1 of 12 © Cypress Semi con duct or Cor po rati on , 20 06 . The information contained he rein is subject to change wit hout notice. Cypress Semic onduct or Corpo ration assu mes no resp onsib ility for the u se of any circuitry o ther than circuitry embodied in a Cypress prod uct.
CY62157E MoBL ® Document #: 38-05695 Rev . *C Page 12 of 12 Document History Page Document Title: CY62157E MoB L ® , 8-Mbit (512K x 16) St atic RAM Document Number: 38-05695 REV .
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