Instruction/ maintenance manual of the product MoBL CY62146ESL Cypress Semiconductor
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CY62146ESL MoBL ® 4-Mbit (256K x 16) S tatic RAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-43142 Rev . ** Revised January 04, 2008 Features ■ V ery high speed: 45 ns ■ Wide voltage range: 2.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 2 of 12 Pin Configuration Figure 1. 44-Pin TSO P II (T op View) [1] Product Port folio Product Range V CC Range (V) [2] S peed (ns) Power Dissip ation Operating I CC , (mA) Stan db y , I SB2 ( μ A) f = 1MHz f = f max Ty p [3] Max Ty p [3] Max Ty p [3] Max CY62146ESL Industrial 2.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 3 of 12 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ......................... ......... –65°C to +150°C Ambient T emperat ure with Power Applied .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 4 of 12 Cap acit ance T ested ini tially and after any design or proce ss changes that may affect these parameters.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 5 of 12 Dat a Retentio n Characteristics Over the Operating Range Parameter Description Conditions Min Ty p [3] Max Unit V DR V CC for Dat a Retention 1.5 V I CCDR Data Retention Current CE > V CC – 0.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 6 of 12 Switching Characteristics Over the Operating Range [9] Parameter Description 45 ns Unit Min Max Read Cycle t RC Read Cycle T ime 45 ns t .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 7 of 12 Switching W aveforms Figure 2. Read Cycle No.1: Address T ransition Controlled . [13, 14] Figure 3.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 8 of 12 Figure 4. Write Cycle No 1: WE Controlled [1 2, 16, 17] Figure 5. Write Cycle 2: CE Cont ro lled [12, 16, 17] Switching W aveforms (con t.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 9 of 12 Figure 6. Write Cycle 3: WE control led, OE LOW [1 7] Figure 7. Write Cycle 4: BHE /BLE Controlled, OE LOW [17] Switching W aveforms (con.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 10 of 12 T ruth T able CE WE OE BHE BLE Input s/Outputs Mode Power H X X X X High-Z Deselect/Power down S tandby (I SB ) L X X H H High-Z Output .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 1 1 of 12 Package Diagrams Figure 8. 44-Pin TSOP II, 51-85087 51-85087-* A [+] Feedback [+] Feedback.
Document #: 001-43142 Rev . ** Revised January 04, 2008 Page 12 of 12 MoBL is a reg istered trademar k and More Batt ery Life is a trad emark of Cypre ss Semiconducto r . All product and compan y names men tioned in this documen t are the trad emarks of th eir respectiv e holders.
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