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Cypress Semiconductor CY7C1410JV18 manual

Instruction/ maintenance manual of the product CY7C1410JV18 Cypress Semiconductor

File size: 0.66 mb
Number of pages: 26

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Page 1

36-Mbit QDR™-II SRAM 2-W ord Burst Architecture CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-12561 Rev .
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 2 of 26 Logic Block Diagram (CY7C1410JV18) Logic Block Diagram (CY7C1425JV18) 2M x 8 Array CLK A (20:0) Gen. K K Control Logic Address Register D [7:0] Read Add.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 3 of 26 Logic Block Diagram (CY7C1412JV18) Logic Block Diagram (CY7C1414JV18) 1M x 18 Array CLK A (19:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 4 of 26 Pin Configuration The pin configuration for CY7C1410JV18, CY7C1412 JV18, and CY7C1414JV18 follow .
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 5 of 26 CY7C1412JV18 (2 M x 18) 123456789 1 0 1 1 A CQ NC/144M A WPS BWS 1 K NC/288M RPS A NC/72M CQ B NC Q9 D.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 6 of 26 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals. Sampled on the rising edge of K and K clocks during val id write opera tions.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 7 of 26 CQ Echo Clock CQ is Referenced with Respec t to C . This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR-II.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 8 of 26 Functional Overview The CY7C1410JV18, CY7C142 5JV18, CY7C1412JV18, and CY7C1414JV18 are synchronous pipel ined Burst SRAMs with a read port and a write port.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 9 of 26 Programmable Impedan ce An external resistor , RQ, must be connected between the ZQ pin on the SRAM and V SS to allow the SRAM to adjust its output driver impedance.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 10 of 26 T ruth T able The truth table for CY7C1410JV18, CY7C1425JV 18, CY7C1412JV18, and CY7C1414JV18 fo llows. [2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising ed ge of K ; input write data on K and K rising edges.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 1 1 of 26 Write Cycle Descriptions The write cycle description tabl e for CY7C1425JV18 follows. [2, 8] BWS 0 K K Comments L L–H – During the Data portion of a write sequence, the single byte (D [8:0] ) is writ te n in to the device.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 12 of 26 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 13 of 26 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 14 of 26 T AP Controller St ate Diagram The state diagram for the T AP controller follows.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 15 of 26 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 16 of 26 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Uni.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 17 of 26 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C1410JV18 CY7C1425JV18 CY7C1 412JV18 CY7C1414JV18 Revision Numb er (31:29) 001 001 001 001 V ersion number .
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 18 of 26 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 19 of 26 Power Up Sequence in QDR-II SRAM QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operations. During Power Up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of st able clock.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 20 of 26 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature .....
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 21 of 26 AC Electrical Characteristics Over the Operating Range [1 1] Parameter Description T est Conditio ns Min Ty p Max Unit V IH Input HIGH V oltage V REF + 0.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 22 of 26 Switching Characteristics Over the Operating Range [19, 20] Cypress Parameter Consor tium Parameter D.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 23 of 26 Switching W aveforms Figure 3. Read/Write/Deselect Sequence [2 5, 26, 27 ] K 1 2 34 5 8 10 6 7 K RPS .
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 24 of 26 Ordering Information Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or visit www .cypress.
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CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18 Document #: 001-12561 Rev . *D Page 25 of 26 Package Diagram Figure 4. 165-ball FBGA (15 x 17 x 1.40 mm), 51-85195 A 1 PIN 1 CORNER 17.00±0.10 15.00±0.10 7.00 1.00 Ø0.50 (165X) Ø0.25 M C A B Ø0.
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Document #: 001-12561 Rev . *D Revised March 10, 2007 Page 26 of 26 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s developed by Cypress, I DT , NEC, R enesas, and Sa msung. All pr oduct and comp any names mentioned i n this documen t are the tr ad emarks of their respe ctive hold er s.

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If you already are a holder of Cypress Semiconductor CY7C1410JV18, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Cypress Semiconductor CY7C1410JV18.

However, one of the most important roles played by the user manual is to help in solving problems with Cypress Semiconductor CY7C1410JV18. Almost always you will find there Troubleshooting, which are the most frequently occurring failures and malfunctions of the device Cypress Semiconductor CY7C1410JV18 along with tips on how to solve them. Even if you fail to solve the problem, the manual will show you a further procedure – contact to the customer service center or the nearest service center

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