Instruction/ maintenance manual of the product CY7C1329H Cypress Semiconductor
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2-Mbit (64K x 32) Pipelined Sync SRAM CY7C1329H Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05673 Rev . *B Revised March 22, 2006 Features • Registered inp uts and outputs for pipelined op er ation • 64K × 32 common I/O architecture • 3.
CY7C1329H Document #: 38-05673 Rev . *B Page 2 of 16 Pin Configuration Selection Guide 166 MHz 133 MHz Unit Maximum Access T i me 3.5 4.0 ns Maximum Operating Current 240 225 mA Maximum CMOS S tandby .
CY7C1329H Document #: 38-05673 Rev . *B Page 3 of 16 Pin Definitions Name I/O Description A 0 , A 1 , A Input- Synchronous Address Inp ut s used to select one of the 64K address locations . Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW , and CE 1 , CE 2 , and CE 3 are sampled active.
CY7C1329H Document #: 38-05673 Rev . *B Page 4 of 16 Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled b y the rising edge of the clock.
CY7C1329H Document #: 38-05673 Rev . *B Page 5 of 16 Interleaved Burst Address T able (MODE = Floating or V DD ) First Address A 1 , A 0 Second Address A 1 , A 0 Third Address A 1 , A 0 Fourth Address.
CY7C1329H Document #: 38-05673 Rev . *B Page 6 of 16 T ruth T able [2, 3, 4, 5, 6, 7] Next Cycle Add. Used Add. Used CE 1 CE 2 CE 3 ZZ ADSP ADSC ADV WRITE OE Unselected None None H X X L X L X X X Uns.
CY7C1329H Document #: 38-05673 Rev . *B Page 7 of 16 Write Bytes D, A H L L H H L Write Bytes D, B H L L H L H Write Bytes D, B, A H L L H L L Write Bytes D, C H L L L H H Write Bytes D, C, A H L L L .
CY7C1329H Document #: 38-05673 Rev . *B Page 8 of 16 Maximum Ratings (Above which the useful life may be impaired. For user guid e- lines, not tested . ) S torage T emperature ................... .............. –65 ° C to +150 ° C Ambient T emperature with Power Applied.
CY7C1329H Document #: 38-05673 Rev . *B Page 9 of 16 Cap acit ance [10] Parameter Descriptio n T est Con d itions 100 TQFP Max. Unit C IN Input Capacit ance T A = 25 ° C, f = 1 MHz, V DD = 3.
CY7C1329H Document #: 38-05673 Rev . *B Page 10 of 16 Switching Characteristics Over the Operating Range [1 1, 12] Parameter Description 166 MHz 133 MHz Unit Min. Max Min. Max t POWER V DD (T ypical) to the First Access [13] 11 m s Clock t CYC Clock Cycle T ime 6.
CY7C1329H Document #: 38-05673 Rev . *B Page 1 1 of 16 Switching W aveforms Read Cycle Timing [17] Note: 17. On this diagram, when CE is LOW, CE 1 is LOW, CE 2 is HIGH and CE 3 is LOW.
CY7C1329H Document #: 38-05673 Rev . *B Page 12 of 16 Write Cycle T iming [17, 18] Note: 18. Full width Write can be initiate d by either GW LOW; or by GW HIGH, BWE LOW and BW [A : D] LOW.
CY7C1329H Document #: 38-05673 Rev . *B Page 13 of 16 Read/Write Cycle Timing [17, 19, 20 ] Notes: 19. The data bus (Q) remains in High-Z following a Write cycle unless an ADSP , ADSC , or ADV cycle is performed.
CY7C1329H Document #: 38-05673 Rev . *B Page 14 of 16 ZZ Mode T iming [21, 22] Notes: 21. Device must be deselected when entering ZZ mode. See Cycle Descr iptions t able for all possible signal conditions to deselect the device. 22. DQs are in High-Z when exiting ZZ sleep mode.
CY7C1329H Document #: 38-05673 Rev . *B Page 15 of 16 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no resp onsibility f or the u se of any circuitry o ther than circui try embodied i n a Cypress prod uct.
CY7C1329H Document #: 38-05673 Rev . *B Page 16 of 16 Document History Page Document Title: CY7C1329H 2-Mbit (64K x 32) Pipelined Syn c SRAM Document Number: 38-05673 REV . ECN NO. Issue Date Orig. of Change Description of Change ** 347357 See ECN PCI New Data Sheet *A 424820 See ECN RXU Converted from Preliminary to Final.
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