Instruction/ maintenance manual of the product CY7C1297H Cypress Semiconductor
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CY7C1297H 1-Mbit (64K x 18) Flow-Through Sync SRAM Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05669 Rev . *B Revised July 6, 2006 Features • 64K x 18 common I/O • 3.3V core power supply (V DD ) • 2.
CY7C1297H Document #: 38-05669 Rev . *B Page 2 of 15 Selection Guide 133 MHz 100 MHz Unit Maximum Access T i me 6.5 8.0 ns Maximum Operating Current 225 205 mA Maximum S tandby Cu rrent 40 40 mA Pin C.
CY7C1297H Document #: 38-05669 Rev . *B Page 3 of 15 Pin Descriptions Name I/O Description A0, A1, A Input- Synchronous Address Inputs used to select one of the 64K address locations . Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW , and CE 1 , CE 2 , and CE 3 are sampled active.
CY7C1297H Document #: 38-05669 Rev . *B Page 4 of 15 Functional Overview All synchronous inputs pass through input registers controlled by the rising edge o f the clock.
CY7C1297H Document #: 38-05669 Rev . *B Page 5 of 15 ZZ Mode Electrical Characteristics Parameter Description T est Conditions Min. Max. Unit I DDZZ Sleep mode standby current ZZ > V DD – 0.2V 40 mA t ZZS Device operation to ZZ ZZ > V DD – 0.
CY7C1297H Document #: 38-05669 Rev . *B Page 6 of 15 T ruth T able for Read/W rite [2, 3] Function GW BWE BW B BW A Read H H X X Read H L H H Write Byte (A, DQP A )H L H L Write Byte (B, DQP B )H L L .
CY7C1297H Document #: 38-05669 Rev . *B Page 7 of 15 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. ... ... ... ... ....... –65 ° C to + 150 ° C Ambient T e mperature with Power Applied .
CY7C1297H Document #: 38-05669 Rev . *B Page 8 of 15 Cap acit ance [9] Parameter Description T est Conditions 100 TQFP Max. Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 3.
CY7C1297H Document #: 38-05669 Rev . *B Page 9 of 15 Switching Characteristics Over the Operating Range [10, 1 1] Parameter Description 133 MHz 100 MHz Unit Min. Max. Min. Max. t POWER V DD (T ypical) to the First Access [12] 11 m s Clock t CYC Clock Cycle Time 7.
CY7C1297H Document #: 38-05669 Rev . *B Page 10 of 15 Timing Diagrams Read Cycle Timing [16] Note: 16. On this diagram, when CE is LOW, CE 1 is LOW, CE 2 is HIGH and CE 3 is LOW .
CY7C1297H Document #: 38-05669 Rev . *B Page 1 1 of 15 Write Cycle Timing [16, 17] Note: 17. Full width W rite can be initiated by eith er GW LOW ; or by GW HIGH, BWE LOW and BW [A:B] LOW .
CY7C1297H Document #: 38-05669 Rev . *B Page 12 of 15 Read/W rite Timing [16, 18, 19] Notes: 18. The data bus (Q) remains in High-Z following a Write cycle unless an ADSP , ADSC , or ADV cycle is performed.
CY7C1297H Document #: 38-05669 Rev . *B Page 13 of 15 ZZ Mode Timing [20, 21] Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all po ssible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode.
CY7C1297H Document #: 38-05669 Rev . *B Page 14 of 15 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no resp onsibility f or the u se of any circuitry o ther than circui try embodied i n a Cypress prod uct.
CY7C1297H Document #: 38-05669 Rev . *B Page 15 of 15 Document History Document Title: CY7C1297H 1-Mbit (64K x 18) Flow-Through Sync SRAM Document Number: 38 -05669 REV .
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