Instruction/ maintenance manual of the product CY7C1223H Cypress Semiconductor
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2-Mbit (128K x 18) Pipelined DCD Sync SRAM CY7C1223H Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05674 Rev .
CY7C1223H Document #: 38-05674 Rev . *B Page 2 of 16 Logic Block Diagram ADDRESS REGISTER ADV CLK BURST COUNTER AND LOGIC CLR Q1 Q0 ADSC BW B BW A CE 1 DQ B, DQP B BYTE WRITE REGISTER DQ A , DQP A BYT.
CY7C1223H Document #: 38-05674 Rev . *B Page 3 of 16 Pin Configurations 100-pin TQFP Pinout A NC NC V DDQ V SSQ NC DQP A DQ A DQ A V SSQ V DDQ DQ A DQ A V SS NC V DD ZZ DQ A DQ A V DDQ V SSQ DQ A DQ A.
CY7C1223H Document #: 38-05674 Rev . *B Page 4 of 16 Pin Descriptions Pin T ype Description A0, A 1 , A Input- Synchronous Address Inputs used to select one of the 128K address locations . Sample d at the rising edge of the CLK i f ADSP or ADSC is active LOW , and CE 1 , CE 2 , and CE 3 are sampled active.
CY7C1223H Document #: 38-05674 Rev . *B Page 5 of 16 Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled b y the rising edge of the clock.
CY7C1223H Document #: 38-05674 Rev . *B Page 6 of 16 Interleaved Burst Address T able (MOD E = Floating or V DD ) First Address A1, A0 Second Address A1, A0 Third Address A1, A0 Fourth Address A1, A0 .
CY7C1223H Document #: 38-05674 Rev . *B Page 7 of 16 T ruth T able for Read/W rite [2, 3] Function GW BWE BW A BW B Read H H X X Read H L H H Write byte A - (DQ A and DQP A )H L L H Write byte B- (DQ B and DQP B )H L H L Write all bytes H L L L Write all bytes L X X X ZZ Mode Electrical Characteristics Parameter Description T est Cond itions Min.
CY7C1223H Document #: 38-05674 Rev . *B Page 8 of 16 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature .............. ... ... ... ... .......... –65°C to +150° Ambient T e mperature with Power Applied .
CY7C1223H Document #: 38-05674 Rev . *B Page 9 of 16 Cap acit ance [9] Parameter Description T est Conditions 100 TQFP Max. Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 3.
CY7C1223H Document #: 38-05674 Rev . *B Page 10 of 16 Switching Characteristics Over the Operating Range [14, 15] Parameter Description 166 MHz 133 MHz Unit Min. Max. Min. Max. t POWER V DD (T ypical) to the first Access [10] 11 m s Clock t CYC Clock Cycle T ime 6.
CY7C1223H Document #: 38-05674 Rev . *B Page 1 1 of 16 Switching W aveforms Read Timing [16] Note: 16. On this diagram, when CE is LOW, CE 1 is LOW, CE 2 is HIGH and CE 3 is LOW.
CY7C1223H Document #: 38-05674 Rev . *B Page 12 of 16 Wri te Tim i n g [16, 17] Note: 17. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW [A:B] LO W.
CY7C1223H Document #: 38-05674 Rev . *B Page 13 of 16 Read/Write T iming [16, 18, 19] Notes: 18. The data bus (Q) remains in High-Z following a Write cycle, unless a new read access ini tiated by ADSC or ADSP .
CY7C1223H Document #: 38-05674 Rev . *B Page 14 of 16 ZZ Mode T iming [20,21] Notes: 20. Device must be desele cted when entering ZZ mode. See truth ta ble fo r all possible signa l conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode.
CY7C1223H Document #: 38-05674 Rev . *B Page 15 of 16 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no resp onsibility f or the u se of any circuitry o ther than circui try embodied i n a Cypress prod uct.
CY7C1223H Document #: 38-05674 Rev . *B Page 16 of 16 Document History Page Document Title: CY7C1223H 2-Mbit (128K x 18) Pipelined DCD Sy nc SRAM Document Number: 38-05674 REV .
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