Instruction/ maintenance manual of the product CY62167EV30 Cypress Semiconductor
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CY62167EV30 MoBL ® 16-Mbit (1M x 16 / 2M x 8) S t atic RAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-943-2600 Document #: 38-05446 Rev .
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 2 of 14 Pin Configuration Figure 1. 48-Ball VFBGA (6 x 7 x 1mm) / (6 x 8 x 1mm) T op View [1, 2, 3] Figure 2.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 3 of 14 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not teste d. S torage T e mperature ........................ ........ –65°C to + 150°C Ambient T e mperatur e with Power Applied .
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 4 of 14 Thermal Resist ance T ested initially and after any design or proce ss changes that may affect these parameters.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 5 of 14 Switching Characteristics Over the Operating Range [14, 15] Parameter Description 45 ns (Industrial /Auto-A) Unit Min Max READ CYCLE t RC.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 6 of 14 Switching W aveforms Figure 5 shows address transition co ntrolled read cy cle waveforms. [19, 20] Figure 5. Read Cycle No. 1 Figure 6 shows OE controlled read cycle waveforms. [20, 21] Figure 6.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 7 of 14 Figure 7 shows WE controlled write cycle waveforms. [18, 22, 23] Figure 7. Write Cycle No. 1 Switching W aveforms (con tinued) t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE V ALID DA T A t BW NOTE 24 CE 1 ADDRESS CE 2 WE DA T A I/O OE BHE /BLE Notes 22.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 8 of 14 Figure 8 shows CE 1 or CE 2 controlled write cycle waveforms. [18, 22, 23] Figure 8. Write Cycle No. 2 Figure 9 shows WE controlled, OE LOW write cycle waveforms. [23] Figure 9. Write Cycle No.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 9 of 14 Figure 10 shows BHE /BLE control led, OE LOW write cycle waveforms. [23] Figure 10. Writ e Cycle No.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 10 of 14 Ordering Information Spee d (ns) Ordering Code Package Diagram Package T ype Operating Range 45 CY62167EV30LL-45BAXI 001-13297 48-ball V.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 1 1 of 14 Figure 12. 48-Ball VFBG A (6 x 8 x 1 mm), 51-85150 Package Diagrams (continued) A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 12 of 14 Figure 13. 48-Pin TSOP I (12 mm x 18 .4 mm x 1.0 mm), 51-85183 Package Diagrams (continued) 1 N 0.020[0.50] 0.007[0.17] 0.037[0.95] 0.002[0.05] 0° -5° MAX. 0.028[0.70] 0.010[0.25] 0.004[0.
CY62167EV30 MoBL ® Document #: 38-05446 Rev . *E Page 13 of 14 Document History Page Document Title: CY62167EV30 MoBL ® 16-Mbit (1M x 16 / 2M x 8) St atic RAM Document Number: 38-05446 REV .
Document #: 38-05446 Rev . *E Re vised March 23, 2009 Page 14 of 14 MoBL is a reg istered trademar k and More Battery Life is a tr ademark of Cypress Semicondu ctor . All product and comp any names men tioned in this d ocument are the tradem arks of their respective holders.
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