Instruction/ maintenance manual of the product CY62146EV30 Cypress Semiconductor
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CY62146EV30 MoBL ® 4-Mbit (256K x 16) S t atic RAM Cypress Semiconduc tor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 38-05567 Rev . * C Revised March 26, 2007 Features • V ery high speed: 45 ns • Wide voltage range: 2.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 2 of 12 Logic Block Diagram Pin Configurations [3 , 4] 256K x 16 RAM Array IO 0 –IO 7 ROW DECODER A 8 A 7 A 6 A 5 A 2 COLUMN DECODER A 11 A 12 .
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 3 of 12 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. Thes e user guidelines are not te sted. S torage T emperature .............. .............. .... –65°C to + 150°C Ambient T emperature with Power Applied .
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 4 of 12 Cap acitance (For All Packages) [9] Parameter Des cription T est Conditions Max Unit C IN Input Capacitance T A = 25°C, f = 1 MHz, V CC .
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 5 of 12 Switching Characteristics (Over the Operating Range) [1 1, 12] Parameter Description 45 ns Unit Min Max Read Cycle t RC Read Cycle T ime .
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 6 of 12 Switching W aveforms Read Cycle 1 (Address Tr a nsition Controlled) [16, 17] Read Cycle No.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 7 of 12 Write Cycle No. 1 (WE Controlled) [15, 19, 20] Write Cycle No. 2 (CE Controlled) [15, 19, 20] Switching W aveforms (continued) t HD t SD .
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 8 of 12 Write Cycle No. 3 (WE Controlled, OE LOW) [20] Write Cycle No. 4 (BHE /BLE Controlled , OE LOW) [20] Switching W aveforms (continued) DAT.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 9 of 12 T ruth T able CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High-Z Deselect/Power down S tandby (I SB ) L X X H H High-Z Outpu t D.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 10 of 12 Package Diagrams Figure 1. 48-ball VFBGA (6 x 8 x 1 mm), 51-85150 A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 1 1 of 12 © Cypress Semicon ductor Corporation, 2006-20 07. The information contai ned herein is sub ject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than ci rcuitry embodied in a C ypress product.
CY62146EV30 MoBL ® Document #: 38-05567 Rev . *C Page 12 of 12 Document History Page Document Title:CY62146EV30 MoBL ® , 4-Mbit (256K x 16) St atic RAM Document Number: 38-05567 REV .
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