Instruction/ maintenance manual of the product nvSRAM Cypress
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PRELIMINARY CY14B102L, CY14B102N 2 Mbit (256K x 8/128K x 16) nvSRAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-45754 Rev .
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 2 of 24 Pinout s Figure 1. Pin Diagram - 48 FBG A Figure 2. Pin Diag ram - 44 Pin TSOP II 48-FBGA (not to scale) Top View (x8) 48-F.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 3 of 24 Figure 3. Pin Diagram - 54 Pi n TSOP II (x16) Pin Definitions Pin Name IO T ype Description A 0 – A 17 Input Address Inputs Used to Select one of the 262,144 bytes of the nvSRAM for x8 Co nfiguration .
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 4 of 24 Device Operation The CY14B102L/CY1 4B102N nvSRAM is made up of two functional components paired in the same physical cell. They are an SRAM memory cell and a nonvola tile QuantumTrap cell.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 5 of 24 completion of the STORE operation, the CY14B102L/CY14B102N remains disab led until the HSB pin returns HIGH.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 6 of 24 Preventing AutoStore The AutoS t ore function is disabled by initiating an AutoS tore disable sequence. A sequence of read ope rations is performed in a manner similar to the software STORE initiation.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 7 of 24 Maximum Ratin gs Exceeding maximum ratings may impair the useful life of the device. These user guid elines are not tested. S torage T emperature .......... .................
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 8 of 24 AC T est Conditions Input Pulse Levels ......... ............... .............. .............. 0V to 3V Input Rise and Fall T imes (10% - 90%)...... .............. .... < 3 ns Input and Output T iming Reference Levels .
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 9 of 24 AC Switching Characteristics Parameters Description 20 ns 25 ns 45 ns Unit Cypress Parameters Alt Parameters Min Max Min Ma.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 10 of 24 Figure 7. SRAM Read Cycl e #2: CE and OE Controlled [3, 15, 19] Figure 8.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 1 1 of 24 Figure 9. SRAM Write Cycle #2: CE Controlled [3 , 18, 19, 20] Figure 10.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 12 of 24 AutoStore/Power Up RECALL Parameters Descrip tion 20 ns 25 ns 45 ns Unit Min Max Min Max Min Max t HRECALL [21] Power Up R.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 13 of 24 Sof tware Controlled STORE/RECALL Cycle In the following table, the so ftware c o ntrolled STORE/RECALL cycle p arameters are listed.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 14 of 24 Hardware STORE Cycle Parameters Descrip tion 20 ns 25 ns 45 ns Unit Min Max Min Max Min Max t DHSB HSB T o Outp ut Active .
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 15 of 24 T ruth T able For SRAM Operations HSB should remain HIGH for SRAM Operations.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 16 of 24 Ordering Information Speed (ns) Ordering Code Package Diagram Package T yp e Operating Range 20 CY14B102L-ZS20XCT 51-85087.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 17 of 24 25 CY14B102L-ZS25XCT 51-85087 44-pin TSOP II Commercial CY14B102L-ZS25XIT 51-85087 44-p in TSOP II Industrial CY14B102L-ZS.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 18 of 24 45 CY14B102L-ZS45XCT 51-85087 44-pin TSOP II Commercial CY14B102L-ZS45XIT 51-85087 44-p in TSOP II Industrial CY14B102L-ZS.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 19 of 24 Part Numbering Nomenclature Option: T - T ape & Reel Blank - S td. S peed: 20 - 20ns 45 - 45 ns Data Bus : L - x8 N - x16 Density: 102 - 2 Mb V oltage: B - 3.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 20 of 24 Package Diagrams Figure 16. 44-Pin TSOP II (51-85087) MAX MIN. DIMENSION IN MM (INCH) 11.938 (0.470) PLANE SEATING PIN 1 I.D. 44 1 18.517 (0.729) 0.800 BSC 0° -5° 0.400(0.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 21 of 24 Figure 17. 48 -Ball FBGA - 6 mm x 10 m m x 1.2 mm (51 -85128) Package Diagrams (continued) A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 22 of 24 Figure 18. 54-Pin TSOP II (51-85160) Package Diagrams (continued) 51-85160 -** [+] Feedback.
PRELIMINARY CY14B102L, CY14B102N Document #: 001-45754 Rev . *B Page 23 of 24 Document History Page Document Title: CY14B102L/CY14B102N 2 Mbit (256K x 8/128K x 16) nvSRAM Document Number: 001-45754 Rev .
Document #: 001-45754 Rev . *B Revised November 10, 2008 Page 24 of 24 AutoS tore and QuantumT rap are registe red trademarks of Simtek Co rporation. All product s and company name s mentioned in this doc ument are the tr ademarks of thei r respective hol ders.
An important point after buying a device Cypress nvSRAM (or even before the purchase) is to read its user manual. We should do this for several simple reasons:
If you have not bought Cypress nvSRAM yet, this is a good time to familiarize yourself with the basic data on the product. First of all view first pages of the manual, you can find above. You should find there the most important technical data Cypress nvSRAM - thus you can check whether the hardware meets your expectations. When delving into next pages of the user manual, Cypress nvSRAM you will learn all the available features of the product, as well as information on its operation. The information that you get Cypress nvSRAM will certainly help you make a decision on the purchase.
If you already are a holder of Cypress nvSRAM, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Cypress nvSRAM.
However, one of the most important roles played by the user manual is to help in solving problems with Cypress nvSRAM. Almost always you will find there Troubleshooting, which are the most frequently occurring failures and malfunctions of the device Cypress nvSRAM along with tips on how to solve them. Even if you fail to solve the problem, the manual will show you a further procedure – contact to the customer service center or the nearest service center