Instruction/ maintenance manual of the product CY62157EV18 Cypress
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Cypress Semic onductor Corpora tion • 198 Champion Court • San Jose , CA 95134-17 09 • 408-94 3-2600 Document #: 38-0549 0 Rev . *D Revised March 30, 2007 CY62157EV18 MoBL ® 8-Mbit (512K x 16) S t atic RAM Features • V ery hi gh speed: 55 ns • Wide voltage range: 1.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 2 of 12 Logic Block Diagram Pin Configuration [3] 512K x 16 RAM Arra y IO 0 –IO 7 ROW DECODER A 8 A 7 A 6 A 5 A 2 COLUMN DECO DER A 11 A 12 A 1.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 3 of 12 Maximum Ratings Exceeding maximum ratings may im p air the useful life of the device. These user guidelines are not teste d. S torage T emperature .............. ................. . –65°C to + 150°C Ambient T emperatur e with Power Applied .
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 4 of 12 Thermal Resist ance [8] Parameter Description T est Conditions BGA Unit Θ JA Thermal Resistance (Junction to Ambient) S til l air , soldered on a 3 × 4.5 inch, two-layer printed circu it board 72 ° C/W Θ JC Thermal Resistance (Junction to Case) 8.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 5 of 12 Switching Characteristics (Over th e Operat ing Range ) [1 1, 12 ] Parameter Descriptio n 55 ns Unit Min Max Read Cycle t RC Read Cycle T.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 6 of 12 Switching W aveforms Read Cycle 1 (Address T ransition Controlled) [17, 18] Read Cycle 2 (OE Controlled) [18, 19] PREVIOUS DATA VALID DAT.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 7 of 12 Write Cycle 1 (WE Controlled) [16, 20, 21] Write Cycle 2 (CE 1 or CE 2 Controlled) [16, 20, 21] Switching W aveforms (conti nued) t HD t .
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 8 of 12 Write Cycle 3 (WE Controlled, OE LOW) [21] Write Cycle 4 (BHE /BLE Controlled, OE LOW) [21] Switching W aveforms (conti nued) VA L I D D .
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 9 of 12 T rut h T a ble CE 1 CE 2 WE OE BHE BLE Input s/Output s Mode Power H X X X X X High-Z Deselect/Power Down S tandby (I SB ) X L X X X X H.
Document #: 38-05490 Rev . *D Page 10 of 12 © Cypress Semi conductor Cor poration, 200 6-2007. The info rmation co ntained h erein is subject to change witho ut notice. Cypress S emiconductor Corporatio n assumes no responsibility for the use of any circuitr y other than circuitr y embodied in a C ypress product.
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 1 1 of 12 Document History Document Title: CY62157EV18 MoBL ® 8-Mbit (512K x 16) St atic RAM Document Number:38-0549 0 REV .
CY62157EV18 MoBL ® Document #: 38-05490 Rev . *D Page 12 of 12 *D 908120 See ECN VKN Add ed footnote #7 related to I SB2 Added footnote #12 related AC timing paramete rs Document Title: CY62157EV18 MoBL ® 8-Mbit (512K x 16) St atic RAM Document Number:38-0549 0 REV .
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