Instruction/ maintenance manual of the product CY62157CV33 Cypress
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512K x 16 S t atic RAM CY62157CV30/33 Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05014 Rev . *F Revised August 31, 2006 Features • T emperature Range s — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • V oltage range: — CY62157CV30: 2.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 2 of 13 Product Port folio Product Range V CC Range Power Dissip ation Operating (I CC ) mA St andby (I SB2 ) µ A f = 1 MHz f = f max Min. T yp. [2] Max. T yp. [2] Max. T yp. [2] Max. T yp. [2] Max. CY62157CV30 Automotive-E 2.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 3 of 13 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ................. .............. .. –65°C to +150°C Ambient T emperature with Power Applied .
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 4 of 13 Electrical Characteristics Over the Operating Range Parameter Description T est Co nditions CY62157CV33-70 Unit Min. T yp. [2] Max. V OH Output HIGH Vo l t a g e I OH = –1.0 mA V CC = 3.0V 2.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 5 of 13 Cap acitance [7] Parameter Description T es t Conditions Max. Unit C IN Input Capacitance T A = 25°C, f = 1 MHz, V CC = V CC(typ.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 6 of 13 Switching Characteristics Over the Operating Range [10] Parameter Description 70 ns Unit Min.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 7 of 13 Switching W aveforms Read Cycle No. 1 (Ad dress Transition Contro lled) [15, 16] Read Cycle No. 2 (OE Controlled) [16, 17] Notes: 15. Device is continuously selected. OE , CE 1 = V IL , BHE and/or BLE = V IL , CE 2 = V IH .
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 8 of 13 Write Cycle No. 1 (WE Controlled) [14, 18, 19] Notes: 18. Data I/O is high-impedance if OE = V IH . 19. If CE 1 goes HIGH or CE 2 goes LOW simult aneously with WE HIGH, the output remains in a hig h-impedance state.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 9 of 13 Write Cycle No. 2 (CE 1 or CE 2 Controlled) [14, 18, 19] Write Cycle No. 3 (WE Controlled, OE LOW) [19] Switching W aveforms (continued) t HD .
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 10 of 13 Write Cycle No. 4 (BHE /BLE Controlled, OE LOW) [19] T ruth T able CE 1 CE 2 WE OE BHE BLE Inputs/Outputs Mode Power H X X X X X High Z Desel.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 1 1 of 13 T ypical DC and AC Characteristics 12.0 10.0 6.0 4.0 0 8.0 I SB ( µ A) 12.0 10.0 6.0 4.0 2.0 2.2 0.0 8.0 I CC (mA) SUPPLY VOLTAGE (V ) SUPPLY VOLTAGE (V) MoBL MoBL 2.2 2.0 (f = 1 MHz) (f = f max , 70ns) 14.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 12 of 13 © Cypress Semi con duct or Cor po rati on , 20 06 . The information contained he rein is subject to change wit hout notice. Cypress Semic onduct or Corpo ration assu mes no resp onsib ility for th e us e of any circuitry o ther than circuitry embodied in a Cypress product.
CY62157CV30/33 Document #: 38-05014 Rev . *F Page 13 of 13 Document History Page Document Title: CY62157CV30/33 512K x 16 Static RAM Document Number: 38-05014 REV .
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