Instruction/ maintenance manual of the product CY62147DV18 Cypress
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4-Mb (256K x 16) S t atic RAM CY62147DV18 MoBL2™ Cypress Semiconductor Corpora tion • 3901 North First S treet • San Jose , CA 95134 • 408-943-2600 Document #: 38-05343 Rev . *B Revised February 26, 2004 Features • V ery hig h speed: 55 ns and 70 n s • Wide volt age range: 1.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 2 of 1 1 Pin Configuration [2 , 3 , 4] FBGA (T o p View) Notes: 2. NC pins are not internally connected on th e die. 3. DNU pins have to be left f loating or tied to Vss to ensure proper application.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 3 of 1 1 Maximum Ratings (Above which the useful life may be impaired. For user guide - lines, not tested.) S torage T emperature ............. .............. ..... –65°C to + 150°C Ambient T emperature with Power Applied .
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 4 of 1 1 I SB1 Automatic CE Power-Down Current — CMOS Inputs CE > V CC − 0.2V , V IN >V CC –0.2V , V IN < 0.2V); f = f MAX (Address and Data Only), f = 0 ( OE, WE , BHE and BLE ) V CC(max) =1.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 5 of 1 1 wqewqewq Dat a Retention W aveform [9] Switching Characteristics Over the Operatin g Range [ 10.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 6 of 1 1 Switching W aveforms Notes: 14. The device is cont inuously selected. OE, CE = V IL , BHE and/ or BLE = V IL . 15. WE is HIGH for read cycle. 16. Address valid prior to or coincident with CE and BHE , BLE trans ition LOW .
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 7 of 1 1 Notes: 17. Data I/O is high impedance if OE = V IH . 18. If CE goes HIGH simultaneously wi th WE = V IH , the output remains in a high-impe dance state. 19. During this period, the I/Os are in out put st ate and input signals shoul d not be applied.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 8 of 1 1 Switching W aveforms (continued) DATA IN t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE CE ADDRESS WE DATA I/O NOTE 19 Write Cycle N o. 3 (WE Controlled, OE LOW) t BW BHE /BLE [18] DATA I/O ADDRESS t HD t SD t SA t HA t AW t WC CE WE DATA IN Write Cycle No.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 9 of 1 1 T ruth T able CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High Z Deselect/Power-Down S tandby (I SB ) X X X H H High Z Deselec.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 10 of 1 1 © Cypress Semico nductor Corpor ation, 2004. Th e information contained herein is subjec t to change without notice. Cypre ss Semico nductor Corporation a ssumes no responsibility fo r the use of any circ uitry other th an circuitry embodied in a Cypress Sem iconductor pro duct.
CY62147DV18 MoBL2™ Document #: 38-05343 Rev . *B Page 1 1 of 1 1 Document History Page Document Title:CY62147DV18 MoBL2™ 4-Mb (256K x 16) St atic RAM Document Number: 38 -05343 REV .
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