Instruction/ maintenance manual of the product CY62146ESL Cypress
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CY62146ESL MoBL ® 4-Mbit (256K x 16) S tatic RAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-43142 Rev . ** Revised January 04, 2008 Features ■ V ery high speed: 45 ns ■ Wide voltage range: 2.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 2 of 12 Pin Configuration Figure 1. 44-Pin TSO P II (T op View) [1] Product Port folio Product Range V CC Range (V) [2] S peed (ns) Power Dissip ation Operating I CC , (mA) Stan db y , I SB2 ( μ A) f = 1MHz f = f max Ty p [3] Max Ty p [3] Max Ty p [3] Max CY62146ESL Industrial 2.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 3 of 12 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ............................ ...... –65°C to +150°C Ambient T emperat ure with Power Applied .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 4 of 12 Cap acit ance T ested ini tially and after any design or proce ss changes that may affect these parameters.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 5 of 12 Dat a Retentio n Characteristics Over the Operating Range Parameter Description Conditions Min Ty p [3] Max Unit V DR V CC for Dat a Retention 1.5 V I CCDR Data Retention Current CE > V CC – 0.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 6 of 12 Switching Characteristics Over the Operating Range [9] Parameter Description 45 ns Unit Min Max Read Cycle t RC Read Cycle T ime 45 ns t .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 7 of 12 Switching W aveforms Figure 2. Read Cycle No.1: Address T ransition Controlled . [13, 14] Figure 3.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 8 of 12 Figure 4. Write Cycle No 1: WE Controlled [1 2, 16, 17] Figure 5. Write Cycle 2: CE Cont ro lled [12, 16, 17] Switching W aveforms (con t.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 9 of 12 Figure 6. Write Cycle 3: WE control led, OE LOW [1 7] Figure 7. Write Cycle 4: BHE /BLE Controlled, OE LOW [17] Switching W aveforms (con.
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 10 of 12 T ruth T able CE WE OE BHE BLE Input s/Outputs Mode Power H X X X X High-Z Deselect/Power down S tandby (I SB ) L X X H H High-Z Output .
CY62146ESL MoBL ® Document #: 001-43142 Rev . ** Page 1 1 of 12 Package Diagrams Figure 8. 44-Pin TSOP II, 51-85087 51-85087-* A [+] Feedback [+] Feedback.
Document #: 001-43142 Rev . ** Revised January 04, 2008 Page 12 of 12 MoBL is a reg istered trademar k and More Batt ery Life is a trad emark of Cypre ss Semiconducto r . All product and compan y names men tioned in this documen t are the trad emarks of th eir respectiv e holders.
An important point after buying a device Cypress CY62146ESL (or even before the purchase) is to read its user manual. We should do this for several simple reasons:
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If you already are a holder of Cypress CY62146ESL, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Cypress CY62146ESL.
However, one of the most important roles played by the user manual is to help in solving problems with Cypress CY62146ESL. Almost always you will find there Troubleshooting, which are the most frequently occurring failures and malfunctions of the device Cypress CY62146ESL along with tips on how to solve them. Even if you fail to solve the problem, the manual will show you a further procedure – contact to the customer service center or the nearest service center
