Instruction/ maintenance manual of the product CY62136EV30 Cypress
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2-Mbit (128K x 16) S t atic RAM CY62136EV30 MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-9 43-2600 Document #: 38-05569 Rev . *B Revised January 6, 2006 Features • V ery high speed: 45 ns • Wide volt age range: 2.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 2 of 12 Notes: 2. NC pins are not conn ected on the die . 3. Pins D3, H1, G2, and H6 in the BGA package are ad dress expansion pins fo r 4 Mbit, 8 Mbit, 16 Mbit and 32 Mbit, respectively . 4. T ypical values are included f or reference only and are not guarant eed or tested.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 3 of 12 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. .............. ..... –65°C to + 150°C Ambient T emperature with Power Applied .
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 4 of 12 Thermal Resist ance [8] Parameter Description T est Co nd itions VFBGA Package TSOP II Package Unit Θ JA Thermal Resistance (Junction to Ambient) [8] S till Air , soldere d on a 3 × 4.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 5 of 12 Switching Characteristics Over the Operating Range [10, 1 1, 12, 13] Parameter Descriptio n 45 ns Unit Min.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 6 of 12 Switching W aveforms [14, 15] Read Cycle 1 (Add ress T ransition Controlled) [14, 15] Read Cycle No. 2 (OE Controlled) [15, 16] Notes: 14. The device is contin uously selected . OE , CE = V IL , BHE and/or BLE = V IL .
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 7 of 12 Write Cycle No. 1 (WE Controlled) [13, 17, 18] Write Cycle No. 2 (CE Controlled) [13, 17, 18] Notes: 17. Data I/O is high impedance if OE = V IH . 18. If CE goes HIGH simulta neou sly with WE = V IH , the output remains in a high-impedan ce state.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 8 of 12 Write Cycle No. 3 (WE Controlled, OE LOW) [18] Write Cycle No. 4 (BHE /BLE Controlled, OE LOW) [18] Switching W aveforms (continued) [14,.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 9 of 12 T ruth T able CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High Z Deselect/Power-down S tandby (I SB ) L X X H H High Z Output Di.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 10 of 12 Package Diagrams A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX. 0.25 C 0.10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 1 1 of 12 © Cypress Semi con duct or Cor po rati on , 20 06 . The information contained he re i n i s su bj ect to ch an ge wi t hou t n otice. Cypress Semic onductor Corporation assu mes no resp onsib ility for th e u se of any circuitry o ther than circuitry embodied i n a Cypress prod uct.
CY62136EV30 MoBL ® Document #: 38-05569 Rev . *B Page 12 of 12 Document History Page Document Title: CY62136EV30 MoBL ® 2-Mbit (128K x 16) Static RAM Document Number: 38-05569 REV . ECN NO. Issue Date Orig. of Change Description of Change ** 237432 See ECN AJU New Data Sheet *A 419988 See ECN RXU Converted from Adva nced Information to Final.
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