Instruction/ maintenance manual of the product CY14E256L Cypress
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CY14E256L 256 Kbit (32K x 8) nvSRAM Cypress Semiconducto r Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06968 Rev .
CY14E256L Document Number: 001-06968 Rev . *F Page 2 of 18 Pin Configurations Figure 1. Pin Diagram: 32-Pin SOIC/DIP Pin Definitions Pin Name Alt IO T ype Description A 0 –A 14 Input Address Input s. Used to select one of the 32,768 bytes of the nvSRAM.
CY14E256L Document Number: 001-06968 Rev . *F Page 3 of 18 Device Operation The CY14E256L nvSRAM is made up of two functional compo - nents paired in the same physical cell. These ar e an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM.
CY14E256L Document Number: 001-06968 Rev . *F Page 4 of 18 Hardware STORE (HSB ) Operation The CY14E256L p rovides the HSB pi n for controlling and acknowledging the STORE operations. The HSB pin is used to request a hardware ST OR E cycle. When the HSB pin is driven LOW , the CY14E256L conditionally initiates a STORE operation after t DELA Y .
CY14E256L Document Number: 001-06968 Rev . *F Page 5 of 18 Dat a Protection The CY14E256L pro tects data from corruption during low voltag e conditions by in hibiting all ex ternally initiated STORE and WRITE operations. The l ow voltage condition is detected when V CC is less than V SWITCH .
CY14E256L Document Number: 001-06968 Rev . *F Page 6 of 18 Best Practices nvSRAM products have been used effectively for over 15 years. While ease of use is one of t he product’s main system values,.
CY14E256L Document Number: 001-06968 Rev . *F Page 7 of 18 Maximum Ratin gs Exceeding maximum ratings may shorten the useful life of the device. These user g uidelines are not tested. S torage T emperature ............. ... .. ... ............ –65 ° C to +150 ° C Ambient T emperature with Power Applied .
CY14E256L Document Number: 001-06968 Rev . *F Page 8 of 18 V OL Output LOW Volt age I OUT = 8 mA 0.4 V V BL Logic ‘0’ V oltage on HSB Output I OUT = 3 mA 0.
CY14E256L Document Number: 001-06968 Rev . *F Page 9 of 18 AC Switching Characteristics SRAM Read Cycle Parameter Description 25 ns 35 ns 45 n s Unit Min Max Min Max Min Max Cypress Parameter Alt t AC.
CY14E256L Document Number: 001-06968 Rev . *F Page 10 of 18 SRAM Writ e Cycle Parameter Descriptio n 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t WC t AVAV Write Cycle T ime .
CY14E256L Document Number: 001-06968 Rev . *F Page 1 1 of 18 AutoS tore or Power Up RECALL Parameter Alt Description CY14E256L Unit Min Max t HRECALL [15] t RESTORE Power up RECALL Duration 550 μ s t.
CY14E256L Document Number: 001-06968 Rev . *F Page 12 of 18 Sof tware Controlled STORE/RECALL Cycle The software controlled ST ORE/RECALL cycle follows.
CY14E256L Document Number: 001-06968 Rev . *F Page 13 of 18 Hardware STORE Cycle Parameter Alt Description CY14E256L Unit Min Max t DHSB [16, 20] t RECOVER, t HHQX Hardware STORE High to Inhibit Off 700 ns t PHSB t HLHX Hardware STORE Pulse Width 15 ns t HLBL Hardware STORE Low to ST ORE Bus y 300 ns Switching W aveforms Figure 13.
CY14E256L Document Number: 001-06968 Rev . *F Page 14 of 18 Ordering Information Spe e d (ns) Ordering Code Package Diagram Package T ype Operating Range 25 CY14E256L-SZ25XCT 51-85127 32-pin SOIC (300.
CY14E256L Document Number: 001-06968 Rev . *F Page 15 of 18 Package Diagram Figure 14. 32-Pin (300 Mil) SOIC (51-85127) 51-85058 *A PIN 1 ID SEATING PLANE 1 16 17 32 DIMENSIONS IN INCHES[MM] MIN. MAX. 0.292[7.416] 0.299[7.594] 0.405[10.287] 0.419[10.642] 0.
CY14E256L Document Number: 001-06968 Rev . *F Page 16 of 18 Figure 15. 32-Pin (300 Mil) CDIP (001-5169 4) Package Diagram (continued) 001-51694 ** [+] Feedback.
CY14E256L Document Number: 001-06968 Rev . *F Page 17 of 18 Document History Page Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM Document Number: 00 1-069 68 Rev .
Document Number: 001-06968 Rev . *F Revised January 30, 20 09 Pag e 18 of 18 AutoS tore and Qua ntumTr ap are registered tr ademarks of Cypress Se miconductor Corpor ation. All produ cts and comp any names mentio ned in this docum ent may be the trade marks of t heir respe ctive holders.
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If you already are a holder of Cypress CY14E256L, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Cypress CY14E256L.
However, one of the most important roles played by the user manual is to help in solving problems with Cypress CY14E256L. Almost always you will find there Troubleshooting, which are the most frequently occurring failures and malfunctions of the device Cypress CY14E256L along with tips on how to solve them. Even if you fail to solve the problem, the manual will show you a further procedure – contact to the customer service center or the nearest service center
