Instruction/ maintenance manual of the product CY14B101L Cypress
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CY14B101L 1 Mbit (128K x 8) nvSRAM Cypress Semiconducto r Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06400 Rev .
CY14B101L Document Number: 001-06400 Rev . *I Page 2 of 18 Pinout s Figure 1. Pin Diagram - 32-Pin SOIC and 48-Pin SSOP Pin Definitions Pin Name Alt IO T ype Description A 0 –A 16 Input Address Inp uts. Used to select one of the 131, 072 bytes of the nvSRAM.
CY14B101L Document Number: 001-06400 Rev . *I Page 3 of 18 Device Operation The CY14B101L nvSRAM is made up of two functional compo - nents paired in the same physical cell. These ar e an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM.
CY14B101L Document Number: 001-06400 Rev . *I Page 4 of 18 Hardware RECALL (Power Up) During power up or after any low power conditi on (V CC < V SWITCH ), an internal RECALL request is latched. When V CC once again exceeds the sense voltage of V SWITCH , a RECALL cycle is automatically initiated and takes t HRECALL to complete.
CY14B101L Document Number: 001-06400 Rev . *I Page 5 of 18 Preventing Store Disable the AutoS tore function by initiatin g an AutoS tore Disable sequence. A sequence of READ operations is performed in a manner similar to the software STORE initiation.
CY14B101L Document Number: 001-06400 Rev . *I Page 6 of 18 . T able 1. Hardwar e Mode Selectio n CE WE OE A 15 – A 0 Mode IO Power H X X X Not Select ed Output H igh Z S tandby L H L X Read SRAM Out.
CY14B101L Document Number: 001-06400 Rev . *I Page 7 of 18 Maximum Ratin gs Exceeding maximum ratings may shorten the useful life of the device. These user g uidelines are not tested. S torage T emperature ............. ... .. ... ............ –65 ° C to +150 ° C Ambient T emperature with Power Applied .
CY14B101L Document Number: 001-06400 Rev . *I Page 8 of 18 Dat a Retention and Endurance Parameter Description Min Unit DA T A R Data Retention at 55 ° C2 0 Y e a r s NV C Nonvolatile STORE Operations 200 K Cap acit ance In the following table, the capacitance parameters are listed.
CY14B101L Document Number: 001-06400 Rev . *I Page 9 of 18 AC Switching Characteristics SRAM Read Cycle Parameter Description 25 ns 35 ns 45 n s Unit Min Max Min Max Min Max Cypress Parameter Alt t AC.
CY14B101L Document Number: 001-06400 Rev . *I Page 10 of 18 SRAM Writ e Cycle Parameter Descriptio n 25 ns 35 ns 45 ns Unit Min Max Min Max Min Max Cypress Parameter Alt t WC t AVAV Write Cycle T ime .
CY14B101L Document Number: 001-06400 Rev . *I Page 1 1 of 18 AutoS tore or Power Up RECALL Parameter Alt Description CY14B101L Unit Min Max t HRECALL [13] t RESTORE Power up RECALL Duration 20 ms t STORE [14, 15 ] t HLHZ STORE Cycle Duration 12.5 ms V SWITCH Low V oltage T rigger Level 2.
CY14B101L Document Number: 001-06400 Rev . *I Page 12 of 18 Sof tware Controlled STORE/RECALL Cycle The software controlled ST ORE/RECALL cycle follows.
CY14B101L Document Number: 001-06400 Rev . *I Page 13 of 18 Hardware STORE Cycle Parameter Alt Description CY14B101L Unit Min Max t PHSB t HLHX Hardware STORE Pulse Width 15 ns t DELA Y [18] t HLQZ , t BLQZ T ime Allowed to Complete SRAM Cycle 1 70 μ s t ss [19, 20] Soft Sequence Processing Time 70 us Switching W aveforms Figure 12.
CY14B101L Document Number: 001-06400 Rev . *I Page 14 of 18 Ordering Information Spe e d (ns) Ordering Code Package Diagram Package T ype Operating Range 25 CY14B101L-SZ25XCT 51-8512 7 32-pin SOIC Com.
CY14B101L Document Number: 001-06400 Rev . *I Page 15 of 18 45 CY14B101L-SZ45XCT 51-8512 7 32-pin SO IC Commercial CY14B101L-SZ45XC 51-85127 32-pin SOIC CY14B101L-SP45XCT 51-85061 48-pi n SSOP CY14B10.
CY14B101L Document Number: 001-06400 Rev . *I Page 16 of 18 Figure 15. 48-Pin Shrunk Small Outline Package (51- 8506 1) Package Diagrams (continued) 51-85061-* C [+] Feedback.
CY14B101L Document Number: 001-06400 Rev . *I Page 17 of 18 Document History Page Document Title: CY14B101L 1 Mbit (128K x 8) nvSRAM Document Number: 00 1-064 00 Rev .
Document Number: 001-06400 Rev . *I Revised January 30, 20 09 Pag e 18 of 18 AutoS tore and Qua ntumTr ap are registered tr ademarks of Cypress Se miconductor Corpor ation. All produ cts and comp any names mentio ned in this docum ent may be the trade marks of t heir respe ctive holders.
An important point after buying a device Cypress CY14B101L (or even before the purchase) is to read its user manual. We should do this for several simple reasons:
If you have not bought Cypress CY14B101L yet, this is a good time to familiarize yourself with the basic data on the product. First of all view first pages of the manual, you can find above. You should find there the most important technical data Cypress CY14B101L - thus you can check whether the hardware meets your expectations. When delving into next pages of the user manual, Cypress CY14B101L you will learn all the available features of the product, as well as information on its operation. The information that you get Cypress CY14B101L will certainly help you make a decision on the purchase.
If you already are a holder of Cypress CY14B101L, but have not read the manual yet, you should do it for the reasons described above. You will learn then if you properly used the available features, and whether you have not made any mistakes, which can shorten the lifetime Cypress CY14B101L.
However, one of the most important roles played by the user manual is to help in solving problems with Cypress CY14B101L. Almost always you will find there Troubleshooting, which are the most frequently occurring failures and malfunctions of the device Cypress CY14B101L along with tips on how to solve them. Even if you fail to solve the problem, the manual will show you a further procedure – contact to the customer service center or the nearest service center
